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| 2N7002E Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) 3 @ VGS = 10 V ID (mA) 240 FEATURES D D D D D Low On-Resistance: 3 W Low Threshold: 2 V (typ) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage BENEFITS D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage APPLICATIONS D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays TO-236 (SOT-23) Marking Code: 7Ewl G 1 3 S 2 D E = Part Number Code for 2N7002E w = Week Code l = Lot Traceability Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) _ Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg Limit 60 "20 240 190 1300 0.35 0.22 357 -55 to 150 Unit V mA W _C/W _C Notes a. Pulse width limited by maximum junction temperature. Document Number: 70860 S-04279--Rev. C, 16-Jul-01 www.vishay.com 11-1 2N7002E Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = 10 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "15 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TC = 125_C VGS = 10 V, VDS = 7.5 V ID(on) VGS = 4.5 V, VDS = 10 V VGS = 10 V, ID = 250 mA rDS(on) gfs VSD VGS = 4.5 V, ID = 200 mA VDS = 15 V, ID = 200 mA IS = 200 mA, VGS = 0 V 800 500 1300 700 1.2 1.8 600 0.85 1.2 3 4 W mS V mA 60 1 68 2 2.5 "10 1 500 mA m V nA Symbol Test Conditions Min Typa Max Unit On-State Drain Currentb Drain-Source On-Resistanceb Forward Transconductanceb Diode Forward Voltage Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 4.5 V ID ^ 250 mA 0.4 0.06 0.06 21 7 2.5 pF 0.6 nC Switchinga, c Turn-On Time Turn-Off Time ton toff VDD = 10 V, RL = 40 W ID ^ 250 mA, VGEN = 10V RG = 10 W 13 18 20 ns 25 Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 Document Number: 70860 S-04279--Rev. C, 16-Jul-01 2N7002E Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics 1.0 VGS = 10, 9, 8, 7, 6 V 0.8 ID - Drain Current (A) 0.9 0.6 ID - Drain Current (A) 25_C 125_C 0.6 5V 1.2 TJ = -55_C Transfer Characteristics 4V 0.4 0.3 0.2 3V 0.0 0 1 2 3 4 5 0.0 0 1 2 3 4 5 6 7 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-Source Voltage 4 3.5 3.0 rDS(on) - On-Resistance ( ) 3 rDS(on) - On-Resistance ( ) 2.5 On-Resistance vs. Drain Current VGS = 4.5 V 2.0 1.5 1.0 0.5 VGS = 10 V ID @ 250 mA 2 ID @ 75 mA 1 0 0 2 4 6 8 10 0.0 0.0 0.2 0.4 0.6 0.8 1.0 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Junction Temperature 2.0 VGS = 10 V @ 250 mA rDS(on) - On-Resistance ( ) (Normalized) 1.6 VGS(th) - Variance (V) 0.4 Threshold Voltage Variance Over Temperature 0.2 ID = 250 mA -0.0 1.2 VGS = 4.5 V @ 200 mA -0.2 0.8 -0.4 0.4 -0.6 0.0 -50 -25 0 25 50 75 100 125 150 -0.8 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) TJ - Junction Temperature (_C) Document Number: 70860 S-04279--Rev. C, 16-Jul-01 www.vishay.com 11-3 2N7002E Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) 40 Capacitance 1.0 VDS = 30 V ID = 0.25 A Gate Charge Ciss C - Capacitance (pF) 24 VGS - Gate-to-Source Voltage (V) Crss 20 25 32 0.8 0.6 16 Coss 8 0.4 0.2 0 0 5 10 15 0.0 0.0 0.1 0.2 0.3 0.4 0.5 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 2 1 IS - Source Current (A) TJ = 85_C 25_C -55_C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) www.vishay.com 11-4 Document Number: 70860 S-04279--Rev. C, 16-Jul-01 |
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